Tenders are sought for the supply, delivery and installation of a plasma chemical vapour deposition system for compound semiconductors for the Tyndall National Institute, UCC.
Deadline
The time limit for receipt of tenders was 2019-10-14.
The procurement was published on 2019-09-12.
Suppliers
The following suppliers are mentioned in award decisions or other procurement documents:
Object Scope of the procurement
Title:
โUCC โ RFT a Plasma Chemical Vapour Deposition System for Compound Semiconductors for the Tyndall National Institute
LEE701Cโ
Products/services: Laboratory, optical and precision equipments (excl. glasses)๐ฆ
Short description:
โTenders are sought for the supply, delivery and installation of a plasma chemical vapour deposition system for compound semiconductors for the Tyndall...โ
Short description
Tenders are sought for the supply, delivery and installation of a plasma chemical vapour deposition system for compound semiconductors for the Tyndall National Institute, UCC.
Show more
Estimated value excluding VAT: EUR 750 000 ๐ฐ
Tenders are sought for the supply, delivery and installation of a plasma chemical vapour deposition system for compound semiconductors for the Tyndall National Institute, UCC.
The process and product development laboratories at Tyndall National Institute, UCC, fabricate a wide variety of semiconductor devices, ranging from traditional silicon microelectronics and Silicon MEMS to III-V photonic devices. We wish to extend our capability in the area of plasma deposition by purchasing a fully functional load locked PECVD (plasma enhanced chemical vapour deposition) or ICPCVD (Inductively coupled plasma chemical vapour deposition) system including pumps which will allow us to move our processing to a higher TRL level in terms of substrate size, deposition processes and control. The system offered must be suitable for use in a class 1 000 cleanroom. As much of the work is in the area of semiconductor R&D we have a requirement for a system that can handle substrates of varying sizes from 10 x 10 mm and various irregular shaped pieces through to 200 mm wafers, including 50 mm, 100 mm and 150 mm wafers. Due to the novel nature of the R&D and customer base we also require that the system be able to deposit a variety of film materials from dielectrics SiO2 (silicon dioxide), Si3N4 (silicon nitride) and SiOxNy (silicon oxynitride) to amorphous silicon and SiC (silicon carbide). We have defined the technical specification in terms of these specific film materials and also for the use of TEOS (Tetraethylorthosilicate) liquid precursor for conformal SiO2 deposition and the specific requirement for low temperature deposition of SiO2 and Si3N4 as well as these materials at the more standard deposition temperature of 300 C. The tenderer should also supply as part of the tender response details of the recipes to be used for cleaning when changing between deposition materials. The tender response must clearly show the costs for all items and any additional options must be clearly identified as such and costed separately. As part of
Show more Award criteria
Price is not the only award criterion and all criteria are stated only in the procurement documents
Scope of the procurement
Estimated total value excluding VAT: EUR 750 000 ๐ฐ
Duration of the contract, framework agreement or dynamic purchasing system
The time frame below is expressed in number of months.
Description
Duration: 12
Additional information: All information relating to tenders is published on www.etenders.gov.ie only.
Legal, economic, financial and technical information Conditions for participation
List and brief description of conditions: Please see RFT document for further details.
Economic and financial standing
List and brief description of selection criteria: Please see RFT document for further details.
Conditions for participation
Please see RFT document for further details.
Technical and professional ability
List and brief description of selection criteria: Please see RFT document for further details.
Conditions for participation
Conditions for participation (technical and professional ability): Please see RFT document for further details.
Conditions related to the contract
Contract performance conditions: Please see RFT document for further details.
Procedure Type of procedure
Open procedure
Administrative information
Time limit for receipt of tenders or requests to participate: 2019-10-14
14:00 ๐
Languages in which tenders or requests to participate may be submitted: English ๐ฃ๏ธ
The time frame below is expressed in number of months.
Minimum time frame during which the tenderer must maintain the tender: 12
Conditions for opening of tenders: 2019-10-14
14:00 ๐
Complementary information Review body
Name: Office of the High Court
Postal address: Four Courts Ground Floor, Inns Quay
Postal town: Dublin
Postal code: 7
Country: Ireland ๐ฎ๐ช
Phone: +353 18886000๐
E-mail: highcourtcentraloffice@courts.ie๐ง
Source: OJS 2019/S 179-435511 (2019-09-12)
Contract award notice (2021-01-11) Contracting authority Name and addresses
Postal address: University of Limerick, Co.Limerick
Information about joint procurement
The contract is awarded by a central purchasing body
Object Scope of the procurement
Currency code: EUR ๐ฐ
Total value of the procurement (excluding VAT) (lowest offer): 570500.00
Total value of the procurement (excluding VAT) (highest offer): 716000.00
Description
Description of the procurement:
โTenders are sought for the supply, delivery and installation of a plasma chemical vapour deposition system for compound semiconductors for the Tyndall...โ
Description of the procurement
Tenders are sought for the supply, delivery and installation of a plasma chemical vapour deposition system for compound semiconductors for the Tyndall National Institute, UCC.
The Process and Product Development laboratories at Tyndall National Institute, UCC, fabricate a wide variety of semiconductor devices, ranging from traditional silicon microelectronics and Silicon MEMS to III-V photonic devices. We wish to extend our capability in the area of plasma deposition by purchasing a fully functional load locked PECVD (Plasma Enhanced Chemical Vapour Deposition) or ICPCVD (Inductively Coupled Plasma Chemical Vapour Deposition) system including pumps which will allow us to move our processing to a higher TRL level in terms of substrate size, deposition processes and control. The system offered must be suitable for use in a class 1 000 cleanroom. As much of the work is in the area of semiconductor R&D we have a requirement for a system that can handle substrates of varying sizes from 10 x 10 mm and various irregular shaped pieces through to 200 mm wafers, including 50 mm, 100 mm and 150 mm wafers. Due to the novel nature of the R&D and customer base we also require that the system be able to deposit a variety of film materials from dielectrics SiO2 (silicon dioxide), Si3N4 (silicon nitride) and SiOxNy (silicon oxynitride) to amorphous silicon and SiC (silicon carbide). We have defined the technical specification in terms of these specific film materials and also for the use of TEOS (Tetraethylorthosilicate) liquid precursor for conformal SiO2 deposition and the specific requirement for low temperature deposition of SiO2 and Si3N4 as well as these materials at the more standard deposition temperature of 300 C. The tenderer should also supply as part of the tender response details of the recipes to be used for cleaning when changing between deposition materials. The tender response must clearly show the costs for all items and any additional options must be clearly identified as such and costed separately. As part of
Show more Award criteria
Quality criterion (name): Technical
Quality criterion (weighting): 35 %
Quality criterion (name): Strategic agreements
Quality criterion (weighting): 5 %
Quality criterion (name): Technical support and maintenance
Quality criterion (weighting): 10 %
Quality criterion (name): Sample assessment
Price (weighting): 40 %
Procedure Administrative information
Previous publication concerning this procedure: 2019/S 179-435511
Award of contract
1๏ธโฃ
Contract Number: 1
Title:
โUCC โ RFT a Plasma Chemical Vapour Deposition System for Compound Semiconductors for the Tyndall National Instituteโ
Date of conclusion of the contract: 2020-12-01 ๐
Information about tenders
Number of tenders received: 3
Number of tenders received by electronic means: 3
Name and address of the contractor
Name: SENTECH Instruments GmbH
National registration number: DE 137 205 446
Postal address: Schwarzschildstrasse 2
Postal town: Berlin
Postal code: D-12489
Country: Germany ๐ฉ๐ช
Phone: +49 3063925525๐
E-mail: gerd.jungmann@sentech.de๐ง
Fax: +49 3063925522 ๐
Region: Deutschland ๐๏ธ
URL: http://www.sentech.de๐
The contractor is an SME โ Information on value of the contract/lot (excluding VAT)
Currency code: EUR ๐ฐ
Lowest offer: 570500.00
Highest offer: 716000.00
Complementary information Review body
Postal town: Dublin 7
Source: OJS 2021/S 010-017357 (2021-01-11)